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FQD13N06价格
参考价格：￥1.0400
型号：FQD13N06LTM 品牌：Fairchild 备注：这里有FQD13N06多少钱，2026年最近7天走势，今日出价，今日竞价，FQD13N06批发/采购报价，FQD13N06行情走势销售排行榜，FQD13N06报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQD13N06 | 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 |   | |
FQD13N06 | N-Channel QFET짰 MOSFET 60 V, 10 A, 140 m廓 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FAIRCHILD 仙童半导体 | | |
FQD13N06 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.14Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
FQD13N06 | N-Channel QFET MOSFET 60 V, 10 A, 140 m 文件：803.8 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | | |
FQD13N06 | 功率 MOSFET，N 沟道，QFET®，60 V，10 A，140 mΩ，DPAK | ONSEMI 安森美半导体 | | |
60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst | FAIRCHILD 仙童半导体 | | ||
60V N -Channel MOSFET Features ID = 5.5 A Low Gate Charge (Typ. 4.8 nC) Low Crss (Typ. 17 pF) Low Level Gate Drive Requirements Allowing Direct Operation form Logic Drivers VDS=60V RDS(ON) (at VGS =10V) | UMW 友台半导体 | | ||
N-Channel QFET짰 MOSFET 60 V, 11 A, 115 m廓 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FAIRCHILD 仙童半导体 | | ||
N-Channel QFET짰 MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FAIRCHILD 仙童半导体 | | ||
60V N -Channel MOSFET Features ID = 5.5 A Low Gate Charge (Typ. 4.8 nC) Low Crss (Typ. 17 pF) Low Level Gate Drive Requirements Allowing Direct Operation form Logic Drivers VDS=60V RDS(ON) (at VGS =10V) | UMW 友台半导体 | | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 60V, ID= 50A RDS(ON) | BYCHIP 百域芯 | | ||
N-Channel QFET짰 MOSFET 60 V, 11 A, 115 m廓 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FAIRCHILD 仙童半导体 | | ||
N-Channel QFET짰 MOSFET 60 V, 10 A, 140 m廓 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FAIRCHILD 仙童半导体 | | ||
60V N-Channel MOSFET 文件：736.7 Kbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | ||
功率 MOSFET，N 沟道，逻辑电平，QFET®，60 V，11 A，115 mΩ，DPAK | ONSEMI 安森美半导体 | | ||
N-Channel QFET MOSFET 60 V, 10 A, 140 m 文件：803.8 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | | ||
60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | |
FQD13N06产品属性
- 类型
描述
- 型号
FQD13N06
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
60V N-Channel MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON-SEMI |
22+ |
N/A |
37500 |
原装正品 香港现货 |
|||
FSC |
2016+ |
TO-252 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ONSEMI |
25+ |
DPAK |
22412 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FSC |
2450+ |
6540 |
只做原装正品现货或订货假一赔十! |
||||
FAIRC |
12+ |
TO-252(DPAK) |
15000 |
全新原装,绝对正品,公司现货供应。 |
|||
FAIRCHILD/仙童 |
23+ |
NA |
5500 |
主营品牌深圳百分百原装现货假一罚十绝对价优 |
|||
FAIRCHILD/仙童 |
20+ |
TO-252 |
7500 |
现货很近!原厂很远!只做原装 |
|||
FAIRCHILD/仙童 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
FSC进口原 |
25+23+ |
TO-252 |
22478 |
绝对原装正品全新进口深圳现货 |
|||
FAIRCHIL |
24+ |
SMD |
18700 |
FQD13N06规格书下载地址
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DdatasheetPDF页码索引
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