位置：首页 > IC中文资料第2377页 > FQU13N06TU
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQU13N06TU | N-Channel QFET MOSFET 60 V, 10 A, 140 m 文件：803.8 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 |   | |
FQU13N06TU | MOSFET N-CH 60V 10A IPAK | ONSEMI 安森美半导体 | | |
60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst | FAIRCHILD 仙童半导体 | | ||
60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | |
FQU13N06TU产品属性
- 类型
描述
- 型号
FQU13N06TU
- 功能描述
MOSFET 60V N-Channel QFET Logic Level
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
I-PAK |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
onsemi |
25+ |
I-PAK |
18746 |
样件支持,可原厂排单订货! |
|||
FAIRCHILD |
20+ |
TO-251 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
NEXPERIA/安世 |
23+ |
SOD323 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
三年内 |
1983 |
只做原装正品 |
|||||
Fairchild/ON |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原厂渠道,现货配单 |
|||
FAIRCHILD/仙童 |
25+ |
I-PAKTO-251 |
20000 |
原装 |
|||
FAIRCHILD/仙童 |
25+ |
I-PAK |
880000 |
明嘉莱只做原装正品现货 |
|||
FAIRCHILD/仙童 |
21+ |
I-PAKTO-251 |
30000 |
优势供应 实单必成 可13点增值税 |
|||
FAIRCHILD |
25+23+ |
TO251 |
8039 |
绝对原装正品全新进口深圳现货 |
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FQU13N06TU数据表相关新闻
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2021-1-14
DdatasheetPDF页码索引
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