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FQU12N20价格
参考价格：￥2.4099
型号：FQU12N20TU 品牌：Fairchild 备注：这里有FQU12N20多少钱，2025年最近7天走势，今日出价，今日竞价，FQU12N20批发/采购报价，FQU12N20行情走势销售排行榜，FQU12N20报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQU12N20 | 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with | Fairchild 仙童半导体 |   | |
FQU12N20 | 200V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | Fairchild 仙童半导体 | | |
FQU12N20 | N-Channel QFET MOSFET 200 V, 9 A, 280 m Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | Fairchild 仙童半导体 | | |
FQU12N20 | N-Channel QFET짰 MOSFET 200 V, 9 A, 280 m廓 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | Fairchild 仙童半导体 | | |
FQU12N20 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=9A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.28 Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
FQU12N20 | N 沟道 QFET® MOSFET 200V, 9.0A, 280mΩ | ONSEMI 安森美半导体 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=9A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.28 Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with | Fairchild 仙童半导体 | | ||
N-Channel QFET짰 MOSFET 200 V, 9 A, 280 m廓 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | Fairchild 仙童半导体 | | ||
200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | Fairchild 仙童半导体 | | ||
200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | Fairchild 仙童半导体 | | ||
200V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | Fairchild 仙童半导体 | | ||
Fast Switching 文件：67.86 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel 200 V (D-S) MOSFET 文件：1.00995 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | |
FQU12N20产品属性
- 类型
描述
- 型号
FQU12N20
- 功能描述
MOSFET 200V N-Channel QFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
2023+ |
TO251 |
6316 |
十五年行业诚信经营,专注全新正品 |
|||
FAIRCHILD |
25+23+ |
TO251 |
11830 |
绝对原装正品全新进口深圳现货 |
|||
FAIRCHILD/仙童 |
24+ |
NA/ |
3400 |
原装现货,当天可交货,原型号开票 |
|||
FAIRCHILD/仙童 |
25+ |
I-PAKTO-251 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
FAIRCHILD/仙童 |
24+ |
TO251 |
880000 |
明嘉莱只做原装正品现货 |
|||
ON/安森美 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
FAIRCHILD/仙童 |
2450+ |
TO-251 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
FAIRCHILD/仙童 |
05+ |
TO-251 |
5651 |
||||
FAIRCHIL |
24+ |
TO-251 |
8866 |
||||
onsemi(安森美) |
24+ |
TO-251-3 |
11346 |
支持大陆交货,美金交易。原装现货库存。 |
FQU12N20规格书下载地址
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DdatasheetPDF页码索引
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