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FQD12N20价格
参考价格：￥2.1395
型号：FQD12N20LTM 品牌：Fairchild 备注：这里有FQD12N20多少钱，2025年最近7天走势，今日出价，今日竞价，FQD12N20批发/采购报价，FQD12N20行情走势销售排行榜，FQD12N20报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FQD12N20 | 200V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | |
FQD12N20 | N-Channel QFET짰 MOSFET 200 V, 9 A, 280 m廓 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
FQD12N20 | N-Channel QFET MOSFET 200 V, 9 A, 280 m Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
FQD12N20 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=9.0A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.28Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
FQD12N20 | N-Channel 200 V (D-S) MOSFET 文件：1.00995 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 9.0 A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.28Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 200 V, ID= 8 A RDS(ON) | Bychip 百域芯 | | ||
200V Logic Level N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 200 V, ID= 8 A RDS(ON) | Bychip 百域芯 | | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 200 V, ID= 8 A RDS(ON) | Bychip 百域芯 | | ||
N-Channel QFET MOSFET 200 V, 9 A, 280 m Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
Fast Switching 文件：67.86 Kbytes Page：2 Pages | ISC 无锡固电 | |
FQD12N20产品属性
- 类型
描述
- 型号
FQD12N20
- 制造商
Fairchild Semiconductor Corporation
- 功能描述
MOSFET N D-PAK
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi(微碧) |
24+ |
N/A |
28630 |
原装正品现货支持实单 |
|||
FAIRCHILD |
24+ |
TO-252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
FAIRCHILD |
1822+ |
TO-252 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
FAIRCHILD |
24+ |
TO-252(DPAK) |
8866 |
||||
ON(安森美) |
24+ |
TO-252-2(DPAK) |
8048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ON(安森美) |
23+ |
DPAK-3 |
9203 |
公司只做原装正品,假一赔十 |
|||
FAIRCHI |
23+ |
TO-252 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
FAIRCHILD/仙童 |
25+ |
TO-252 |
35043 |
FAIRCHILD/仙童全新特价FQD12N20TM即刻询购立享优惠#长期有货 |
|||
FSC |
23+ |
TO252 |
3000 |
原装正品假一罚百!可开增票! |
|||
FAIRCILD |
22+ |
TO-252 |
8000 |
原装正品支持实单 |
FQD12N20规格书下载地址
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DdatasheetPDF页码索引
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