250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=7.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance,

600V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=6.26A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

600V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=8A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.55Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=6.3A@ TC=25℃ ·Drain Source Voltage -VDSS=900V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.9Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Mosfet Transistor

文件：162.17 Kbytes Page：2 Pages

600V N-Channel MOSFET

文件：1.30367 Mbytes Page：10 Pages

N-Channel QFET짰 MOSFET 600 V, 7.5 A, 1.2 廓

文件：829.76 Kbytes Page：8 Pages

N 沟道 QFET® FRFET® MOSFET 600V, 6.26A, 1.5Ω

N-Channel QFET짰 MOSFET 600 V, 7.5 A, 1.2 廓

文件：829.76 Kbytes Page：8 Pages

800V N-Channel MOSFET

文件：1.29641 Mbytes Page：10 Pages

800V N-Channel MOSFET

文件：1.29641 Mbytes Page：10 Pages

Power MOSFET, N-Channel, QFET®, 800 V, 8 A, 1.55 Ω, TO-220F

800V N-Channel MOSFET

文件：1.28564 Mbytes Page：12 Pages

800V N-Channel MOSFET

文件：1.28564 Mbytes Page：12 Pages

900V N-Channel MOSFET

文件：865.81 Kbytes Page：10 Pages

功率 MOSFET，N 沟道，QFET®，900 V，6.3 A，1.9 Ω，TO-220F