isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=6.3A@ TC=25℃ ·Drain Source Voltage -VDSS=900V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.9Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，N 沟道，QFET®，900 V，6.3 A，1.9 Ω，TO-220F

900V N-Channel MOSFET

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900V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

8 Amps, 900 Volts N-CHANNEL POWER MOSFET

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8A, 900V N-CHANNEL POWER MOSFET

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Fast Switching Speed

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isc N-Channel MOSFET Transistor

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