isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=6.3A@ TC=25℃ ·Drain Source Voltage -VDSS=900V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.9Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，N 沟道，QFET®，900 V，6.3 A，1.9 Ω，TO-220F

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •6.3A, 900V, RDS(on)= 1.9Ω（最大值）@VGS = 10 V, ID = 3.15A栅极电荷低（典型值：35nC)\n•低 Crss（典型值12pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

900V N-Channel MOSFET

文件：865.81 Kbytes Page：10 Pages

900V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds — Switching Tim

900V N-Channel MOSFET

文件：865.81 Kbytes Page：10 Pages

Advanced Power MOSFET

文件：253.32 Kbytes Page：7 Pages