isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.3Ω(Max) ·100 Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed swi

N-Channel QFET짰 MOSFET 900 V, 6.0 A, 2.3 廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switchi

900V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switchi

N-Channel QFET짰 MOSFET 900 V, 6.0 A, 2.3 廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switchi

6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 6N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the

N-Channel Power MOSFET

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6.2A, 900V N-CHANNEL POWER MOSFET

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900V N-Channel MOSFET

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N-CHANNEL POWER MOSFET

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