60V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 32.6A, 60V, RDS(on)= 0.021Ω@VGS= 10 V • Low gate charge ( typical 24.5 nC) • Low Crss ( typical 90 pF) •

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=32.6A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.021Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

50 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 50N06is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mod

50 Amps, 60 Volts N-CHANNEL POWER MOSFET

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50A 60V N-channel Enhancement Mode Power MOSFET

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50A 60V N-channel Enhancement Mode Power MOSFET

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50A 60V N-channel Enhancement Mode Power MOSFET

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