位置：首页 > IC中文资料第344页 > 50N06
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
50N06 | 50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mod | UTC 友顺 |   | |
50N06 | 60V N-Channel Enhancement Mode Power MOSFET Features VDS = 60V,ID =50A RDS(ON),12mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired | UMW 友台半导体 | | |
50N06 | 60V N-Channel Enhancement Mode Power MOSFET General Description The 50N06 uses advanced trench technology and design to provide excellent RDS(ON) wi th low gate charge. It ca n be used in a wide variety of applications. Features VDS = 60V,ID =50A RDS(ON),12mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Technology | EVVOSEMI 翊欧 | | |
50N06 | 50 Amps, 60 Volts N-CHANNEL MOSFET 文件：338.75 Kbytes Page：6 Pages | KIA 可易亚半导体 | | |
50N06 | N-Channel Power MOSFET 文件：445.89 Kbytes Page：9 Pages | NELLSEMI 尼尔半导体 | | |
50N06 | 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | |
50N06 | 50A mps,60 Volts N-CHANNEL MOSFET 文件：194.25 Kbytes Page：2 Pages | CHONGQING 平伟实业 | | |
50N06 | DFN-中低压MOS | GOODWORK 固得沃克电子 | | |
50N06 | MOS管 | ETC 知名厂家 | ETC | |
50N06 | 场效应管 | hxymos 华轩阳电子 | | |
50N06 | 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：330.9 Kbytes Page：8 Pages | UTC 友顺 | | |
50N06 | 50A 60V N-channel Enhancement Mode Power MOSFET 文件：812.59 Kbytes Page：10 Pages | WXDH 东海半导体 | | |
50N06 | 50A 60V N-channel Enhancement Mode Power MOSFET 文件：808.72 Kbytes Page：10 Pages | WXDH 东海半导体 | | |
50N06 | 50A 60V N-channel Enhancement Mode Power MOSFET 文件：807.77 Kbytes Page：10 Pages | WXDH 东海半导体 | | |
50N06 | 50A 60V N-channel Enhancement Mode Power MOSFET 文件：808.18 Kbytes Page：10 Pages | WXDH 东海半导体 | | |
50N06 | 50A 60V N-channel Enhancement Mode Power MOSFET 文件：807.99 Kbytes Page：10 Pages | WXDH 东海半导体 | | |
50N06 | 50A 60V N-channel Enhancement Mode Power MOSFET 文件：808.45 Kbytes Page：10 Pages | WXDH 东海半导体 | | |
50N06 | N-Channel 60 V (D-S) MOSFET 文件：1.38226 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
50N06 | Fast Switching Speed 文件：65.56 Kbytes Page：2 Pages | ISC 无锡固电 | | |
50A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06-Q is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of swit | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mod | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mod | UTC 友顺 | | ||
50A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06-Q is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of swit | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mod | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mod | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：330.9 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：338.86 Kbytes Page：9 Pages | UTC 友顺 | | ||
50A mps,60 Volts N-CHANNEL MOSFET 文件：194.25 Kbytes Page：2 Pages | CHONGQING 平伟实业 | | ||
null50A竊?0V N-CHANNEL MOSFET 文件：399.79 Kbytes Page：6 Pages | KIA 可易亚半导体 | | ||
50A mps,60 Volts N-CHANNEL MOSFET 文件：194.25 Kbytes Page：2 Pages | CHONGQING 平伟实业 | | ||
N-CHANNEL POWER MOSFET 文件：325.52 Kbytes Page：8 Pages | UTC 友顺 | | ||
isc N-Channel MOSFET Transistor 文件：273.77 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：330.9 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：330.9 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：330.9 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：325.52 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | ||
50A mps,60 Volts N-CHANNEL MOSFET 文件：194.25 Kbytes Page：2 Pages | CHONGQING 平伟实业 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.10176 Mbytes Page：3 Pages | DOINGTER 杜因特 | | ||
N-Channel 60-V (D-S) MOSFET 文件：1.27329 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：330.9 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：330.9 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-Channel 60-V (D-S) MOSFET 文件：949.67 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.38219 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 60 V (D-S) MOSFET 文件：991.23 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：325.52 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：330.9 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-Channel 60 V (D-S) MOSFET 文件：991.15 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | |
50N06产品属性
- 类型
描述
- 型号
50N06
- 制造商
STMicroelectronics
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC/友顺 |
24+ |
NA/ |
3350 |
原装现货,当天可交货,原型号开票 |
|||
ST |
23+ |
NA |
3500 |
全新原装假一赔十 |
|||
UTC/友顺 |
25+ |
TO-220 |
51848 |
百分百原装现货 实单必成 欢迎询价 |
|||
SYFOREVER |
25+ |
TO-252 |
20300 |
SYFOREVER原装特价50N06即刻询购立享优惠#长期有货 |
|||
FAI |
13+ |
TO220 |
1000 |
原装现货价格有优势量大可以发货 |
|||
UTC |
0412+ |
TO-252 |
136 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TECH PUBLIC(台舟) |
24+ |
TO-252 |
5000 |
诚信服务,绝对原装原盘。 |
|||
UMW 友台 |
23+ |
T0-252 |
27500 |
原装正品，实单请联系 |
|||
UTC/友顺 |
23+ |
TO-252 |
6800 |
原装正品,支持实单 |
|||
VB |
2024 |
TO-252 |
13500 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
50N06芯片相关品牌
50N06规格书下载地址
50N06参数引脚图相关
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50N06数据表相关新闻
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DdatasheetPDF页码索引
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