位置：首页 > IC中文资料第344页 > 50N06
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
50N06 | 50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mod | UTC 友顺 |   | |
50N06 | 60V N-Channel Enhancement Mode Power MOSFET Features VDS = 60V,ID =50A RDS(ON),12mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired | UMW 友台半导体 | | |
50N06 | 60V N-Channel Enhancement Mode Power MOSFET General Description The 50N06 uses advanced trench technology and design to provide excellent RDS(ON) wi th low gate charge. It ca n be used in a wide variety of applications. Features VDS = 60V,ID =50A RDS(ON),12mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Technology | EVVOSEMI 翊欧 | | |
50N06 | 50 Amps, 60 Volts N-CHANNEL MOSFET 文件：338.75 Kbytes Page：6 Pages | KIA 可易亚半导体 | | |
50N06 | N-Channel Power MOSFET 文件：445.89 Kbytes Page：9 Pages | NELLSEMI 尼尔半导体 | | |
50N06 | 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | |
50N06 | 50A mps,60 Volts N-CHANNEL MOSFET 文件：194.25 Kbytes Page：2 Pages | CHONGQING 平伟实业 | | |
50N06 | DFN-中低压MOS | GOODWORK 固得沃克电子 | | |
50N06 | MOS管 | ETC 知名厂家 | ETC | |
50N06 | 场效应管 | HXYMOS 华轩阳电子 | | |
50N06 | 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：330.9 Kbytes Page：8 Pages | UTC 友顺 | | |
50N06 | 50A 60V N-channel Enhancement Mode Power MOSFET 文件：812.59 Kbytes Page：10 Pages | WXDH 东海半导体 | | |
50N06 | 50A 60V N-channel Enhancement Mode Power MOSFET 文件：808.72 Kbytes Page：10 Pages | WXDH 东海半导体 | | |
50N06 | 50A 60V N-channel Enhancement Mode Power MOSFET 文件：807.77 Kbytes Page：10 Pages | WXDH 东海半导体 | | |
50N06 | 50A 60V N-channel Enhancement Mode Power MOSFET 文件：808.18 Kbytes Page：10 Pages | WXDH 东海半导体 | | |
50N06 | 50A 60V N-channel Enhancement Mode Power MOSFET 文件：807.99 Kbytes Page：10 Pages | WXDH 东海半导体 | | |
50N06 | 50A 60V N-channel Enhancement Mode Power MOSFET 文件：808.45 Kbytes Page：10 Pages | WXDH 东海半导体 | | |
50N06 | N-Channel 60 V (D-S) MOSFET 文件：1.38226 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
50N06 | Fast Switching Speed 文件：65.56 Kbytes Page：2 Pages | ISC 无锡固电 | | |
50A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06-Q is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of swit | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mod | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mod | UTC 友顺 | | ||
50A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06-Q is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of swit | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mod | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mod | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：330.9 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：338.86 Kbytes Page：9 Pages | UTC 友顺 | | ||
50A mps,60 Volts N-CHANNEL MOSFET 文件：194.25 Kbytes Page：2 Pages | CHONGQING 平伟实业 | | ||
null50A竊?0V N-CHANNEL MOSFET 文件：399.79 Kbytes Page：6 Pages | KIA 可易亚半导体 | | ||
50A mps,60 Volts N-CHANNEL MOSFET 文件：194.25 Kbytes Page：2 Pages | CHONGQING 平伟实业 | | ||
N-CHANNEL POWER MOSFET 文件：325.52 Kbytes Page：8 Pages | UTC 友顺 | | ||
isc N-Channel MOSFET Transistor 文件：273.77 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：330.9 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：330.9 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：330.9 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：325.52 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | ||
50A mps,60 Volts N-CHANNEL MOSFET 文件：194.25 Kbytes Page：2 Pages | CHONGQING 平伟实业 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.10176 Mbytes Page：3 Pages | DOINGTER 杜因特 | | ||
N-Channel 60-V (D-S) MOSFET 文件：1.27329 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：330.9 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：330.9 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-Channel 60-V (D-S) MOSFET 文件：949.67 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.38219 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 60 V (D-S) MOSFET 文件：991.23 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：325.52 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：330.9 Kbytes Page：8 Pages | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-Channel 60 V (D-S) MOSFET 文件：991.15 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：345.38 Kbytes Page：8 Pages | UTC 友顺 | |
50N06产品属性
- 类型
描述
- 型号
50N06
- 制造商
STMicroelectronics
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC/友顺 |
25+ |
TO-220 |
880000 |
明嘉莱只做原装正品现货 |
|||
SEMIHOW |
25+23+ |
TO-220 |
30005 |
绝对原装正品全新进口深圳现货 |
|||
VBSEMI/微碧半导体 |
24+ |
TO252 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
TO-252 |
2170 |
正品原装--自家现货-实单可谈 |
|||||
FSC |
24+ |
TO-220 |
19500 |
郑重承诺只做原装进口现货 |
|||
FSC |
18+ |
TO220 |
85600 |
保证进口原装可开17%增值税发票 |
|||
UTC |
2023+ |
TO-220 |
50000 |
原装现货 |
|||
UMW |
24+ |
con |
269 |
现货常备产品原装可到京北通宇商城查价格 |
|||
UTC |
24+ |
TO220 |
6000 |
深圳原装现货价格优势 |
|||
友台UMW |
25+ |
DIP |
2500 |
国产替换现货降本 |
50N06规格书下载地址
50N06参数引脚图相关
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- 50L-026
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DdatasheetPDF页码索引
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