DESCRIPTION

The UTC 50N06is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances.

FEATURES

* RDS(ON)= 23mΩ@VGS= 10 V

* Ultra low gate charge ( typical 30 nC )

* Low reverse transfer capacitance ( CRSS= typical 80 pF )

* Fast switching capability

* 100 avalanche energy specified

* Improved dv/dt capability