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FQPF2N60C价格
参考价格:¥1.9182
型号:FQPF2N60C 品牌:Fairchild 备注:这里有FQPF2N60C多少钱,2026年最近7天走势,今日出价,今日竞价,FQPF2N60C批发/采购报价,FQPF2N60C行情走势销售排行榜,FQPF2N60C报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQPF2N60C | 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | ||
FQPF2N60C | N-Channel QFET® MOSFET 600 V, 2 A, 4.7 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and hi | FAIRCHILD 仙童半导体 | ||
FQPF2N60C | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=2.0A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =4.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | ||
FQPF2N60C | 功率 MOSFET,N 沟道,QFET®,600 V,2 A,4.7 Ω,TO-220F | ONSEMI 安森美半导体 | ||
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h | MOTOROLA 摩托罗拉 | |||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N60E is supplied | PHILIPS 飞利浦 | |||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N60E is supplied | PHILIPS 飞利浦 | |||
TMOS POWER FET 2.0 AMPERES 600 VOLTS 文件:271.17 Kbytes Page:10 Pages | MOTOROLA 摩托罗拉 |
FQPF2N60C产品属性
- 类型
描述
- 型号
FQPF2N60C
- 功能描述
MOSFET 600V N-Channel Advance Q-FET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
23+ |
TO-220F |
65400 |
||||
ON/安森美 |
21+ |
TO-220F(TO-220IS) |
8080 |
只做原装,质量保证 |
|||
ON/安森美 |
25+ |
TO-220F(TO-220IS) |
30000 |
原装正品公司现货,假一赔十! |
|||
FAIRCHILD/仙童 |
2450+ |
TO-220F |
9850 |
只做原装正品现货或订货假一赔十! |
|||
FAIRCHILD/仙童 |
24+ |
TO-220F |
9600 |
原装现货,优势供应,支持实单! |
|||
FAIRCHILD/仙童 |
25+ |
TO-220F |
45000 |
FAIRCHILD/仙童全新现货FQPF2N60C即刻询购立享优惠#长期有排单订 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
FSC |
2010 |
TO-220 |
27 |
全新原装正品现货 |
|||
FAIRCHIL |
2015+ |
TO-220F |
12500 |
全新原装,现货库存长期供应 |
|||
ON Semiconductor Corporation |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
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DdatasheetPDF页码索引
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