型号 功能描述 生产厂家 企业 LOGO 操作
FQPF10N60

600V N-Channel MOSFET

文件:1.19884 Mbytes Page:10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pul

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=9.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.73Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc

KERSEMI

600V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching perfor mance, and withstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

600V N-Channel MOSFET

文件:1.19884 Mbytes Page:10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

600V N-Channel MOSFET

文件:1.02071 Mbytes Page:10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

功率 MOSFET,N 沟道,QFET®,600 V,9.5 A,730 mΩ,TO-220F

ONSEMI

安森美半导体

MOSFET N-CH 600V 9A TO-220F

ONSEMI

安森美半导体

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a

UTC

友顺

10A 600V N-channel Enhancement Mode Power MOSFET

文件:976.2 Kbytes Page:11 Pages

WXDH

东海半导体

N-Channel 6 50V (D-S) Power MOSFET

文件:2.17857 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N-Channel 650V (D-S) Power MOSFET

文件:2.33382 Mbytes Page:11 Pages

VBSEMI

微碧半导体

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件:330.13 Kbytes Page:8 Pages

UTC

友顺

FQPF10N60产品属性

  • 类型

    描述

  • 型号

    FQPF10N60

  • 功能描述

    MOSFET 600V N-Ch Q-FET advance C-Series

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-23 13:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD
24+
TO-220F
27500
原装正品,价格最低!
FAIRCHILD/仙童
2410+
TO-220F
80000
原装正品.假一赔百.正规渠道.原厂追溯.
FAIRCHILD
23+
TO-220F
65400
FAIRCHILD/仙童
25+
TO220F
54648
百分百原装现货 实单必成 欢迎询价
FAIRCHILD
0723+
TO-220F
6000
绝对原装自己现货
FAIRCHILD/仙童
2511
TO-220
12800
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
onsemi
两年内
NA
426
实单价格可谈
FAIRCHILD/仙童
23+
TO-220F
22000
原装现货假一罚十
FAIRCHILD/仙童
23+
NA
7825
原装正品!清仓处理!
FAIRCHILD/仙童
2023+
TO-220F
6893
专注全新正品,优势现货供应

FQPF10N60数据表相关新闻