型号 功能描述 生产厂家&企业 LOGO 操作
FQPF10N60C

600VN-ChannelMOSFET

TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtomini-mizeon-stateresistance,providesuperiorswitchingperfor-mance,andwithstandhighenergypul

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FQPF10N60C

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductorÿsproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformanc

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
FQPF10N60C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.73Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
FQPF10N60C

600VN-ChannelMOSFET

文件:1.19884 Mbytes Page:10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FQPF10N60C

600VN-ChannelMOSFET

文件:1.02071 Mbytes Page:10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

600VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

10Amps,600/650VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC10N60isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchinga

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-Channel650V(D-S)PowerMOSFET

文件:2.17857 Mbytes Page:10 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-Channel650V(D-S)PowerMOSFET

文件:2.33382 Mbytes Page:11 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

10Amps,600/650VoltsN-CHANNELPOWERMOSFET

文件:330.13 Kbytes Page:8 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

10A600VN-channelEnhancementModePowerMOSFET

文件:976.2 Kbytes Page:11 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司

WXDH

FQPF10N60C产品属性

  • 类型

    描述

  • 型号

    FQPF10N60C

  • 功能描述

    MOSFET 600V N-Ch Q-FET advance C-Series

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-5-29 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD
2016+
TO-220F
3500
只做原装,假一罚十,公司可开17%增值税发票!
FSC
23+
NA
3500
全新原装假一赔十
三年内
1983
只做原装正品
FSC
24+
TO-220F
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
FAIRCHILD/仙童
25+
TO220F
54648
百分百原装现货 实单必成 欢迎询价
FSC
24+/25+
TO-220F
1000
原装正品现货库存价优
ON
1932+
TO-220F
503
一级代理,专注军工、汽车、医疗、工业、新能源、电力
FAIRCHILD/仙童
24+
TO-220F
6000
全新原装,一手货源,全场热卖!
FSC
24+
TO-220F
536
全新原装环保现货
FAIRCHILD/仙童
11+
TO-220F
26318
全新原装现货

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