isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.61Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，N 沟道，QFET®，FRFET®，500 V，10 A，610mΩ，TO-220F

500V N-Channel MOSFET Improved dv/dt capability

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10 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC10N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanc

10A, 500V N-CHANNEL POWER MOSFET

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10A 500V N-channel enhanced field effect transistor

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10A 500V N-channel enhanced field effect transistor

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500V N-Channel MOSFET Improved dv/dt capability

文件：992.82 Kbytes Page：10 Pages