10 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC10N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanc

10A, 500V N-CHANNEL  POWER MOSFET

The UTC 10N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutati • RDS(ON)=0.68Ω @ VGS=10V \n• High Switching Speed \n• 100% Avalanche Tested;

10A, 500V N-CHANNEL POWER MOSFET

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丝印代码：10N50AF；10A 500V N-channel enhanced field effect transistor

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丝印代码：10N50AS；10A 500V N-channel enhanced field effect transistor

文件：949.66 Kbytes Page：6 Pages

丝印代码：10N50AS；10A 500V N-channel enhanced field effect transistor

文件：949.66 Kbytes Page：6 Pages

丝印代码：10N50AF；10A 500V N-channel enhanced field effect transistor

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丝印代码：10N50AC；10A 500V N-channel enhanced field effect transistor

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丝印代码：10N50BF；10A 500V N-channel enhanced field effect transistor

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丝印代码：10N50BS；10A 500V N-channel enhanced field effect transistor

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丝印代码：10N50BS；10A 500V N-channel enhanced field effect transistor

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丝印代码：10N50BF；10A 500V N-channel enhanced field effect transistor

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丝印代码：10N50BC；10A 500V N-channel enhanced field effect transistor

文件：949.77 Kbytes Page：6 Pages

10 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC10N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanc

10 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC10N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanc

10A, 500V N-CHANNEL POWER MOSFET

The UTC 10N50K-MT is an N-channel mode power MOSFETusing UTC’s advanced technology to provide customers with planarstripe and DMOS technology. This technology allows a minimumon-state resistance and superior switching performance. It also canwithstand high energy pulse in the avalanche and commutati • RDS(ON)<0.68Ω @ VGS=10V\n• High Switching Speed\n• 100% Avalanche Tested;

10 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC10N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanc

10 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC10N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanc

10A, 500V N-CHANNEL POWER MOSFET

文件：179.36 Kbytes Page：6 Pages

10A 500V N-channel enhanced field effect transistor

文件：949.66 Kbytes Page：6 Pages

10A 500V N-channel enhanced field effect transistor

文件：949.77 Kbytes Page：6 Pages

500V N-Channel MOSFET Improved dv/dt capability

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10A, 500V N-CHANNEL POWER MOSFET

文件：179.36 Kbytes Page：6 Pages

10A, 500V N-CHANNEL POWER MOSFET

文件：179.36 Kbytes Page：6 Pages

N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE

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N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE

文件：192.9 Kbytes Page：5 Pages

N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE

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10A, 500V N-CHANNEL POWER MOSFET

文件：179.36 Kbytes Page：6 Pages

10A, 500V N-CHANNEL POWER MOSFET

文件：179.36 Kbytes Page：6 Pages

MOS(场效应管)

500V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These

10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive

10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs

Description The RFV10N50BE is an N-Channel fast switching MOSFET transistor that is designed for switching regulators, inverters and motor drivers. The RFV10N50BE is a monolithic structure incorporating a high voltage, high current MOSFET, a control MOSFET and ESD protection diodes. As indicated

10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs

Description The RFV10N50BE is an N-Channel fast switching MOSFET transistor that is designed for switching regulators, inverters and motor drivers. The RFV10N50BE is a monolithic structure incorporating a high voltage, high current MOSFET, a control MOSFET and ESD protection diodes. As indicated