900V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=8.0A@ TC=25℃ ·Drain Source Voltage -VDSS=900V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ThinkiSemi 8.0A,900V Planar N-Channel Power MOSFETs

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功率 MOSFET，N 沟道，QFET®，900 V，8.0 A，1.4 Ω，TO-220

N-Channel QFET MOSFET 900 V, 8.0 A, 1.4 Ohm

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Power MOSFET

DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 1.2Ω @ VGS=10V, ID=4.5A * U

N-Channel Power MOSFET

DESCRIPTION They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. The Nell 9N90 is a three-terminal silicon device with current conduction capability of 9A, fast switchi

9A, 900V N-CHANNEL POWER MOSFET

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900V N-CHANNEL MOSFET

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9A900V N-CHANNEL MOSFET

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