General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features

• 5.9A, 900V, RDS(on)= 1.3Ω@VGS= 10 V

• Low gate charge ( typical 55 nC)

• Low Crss ( typical 25 pF)

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability