FQA9N90价格
参考价格：￥9.2179
型号：FQA9N90_F109 品牌：Fairchild 备注：这里有FQA9N90多少钱，2026年最近7天走势，今日出价，今日竞价，FQA9N90批发/采购报价，FQA9N90行情走势销售排行榜，FQA9N90报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：FQA9N90；N-Channel QFET® MOSFET 900 V, 8.6 A, 1.3 Ω Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval | ONSEMI 安森美半导体 |   | ||
FQA9N90 | 900V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand | FAIRCHILD 仙童半导体 | | |
FQA9N90 | 900V N-Channel MOSFET 文件：814.06 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | | |
丝印代码：FQA9N90C；N-Channel QFET® MOSFET 900 V, 9 A, 1.4 Ω Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval | ONSEMI 安森美半导体 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max) ·100 Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed swit | ISC 无锡固电 | | ||
900V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FAIRCHILD 仙童半导体 | | ||
Power MOSFET, N-Channel, QFET®, 900 V, 9.0 A, 1.4 Ω, TO-3P 该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •9A, 900V, RDS(on)= 1.4Ω（最大值）@VGS = 10 V, ID = 4.5A栅极电荷低（典型值：45nC)\n•低 Crss（典型值14pF)\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准\n•RoHS compliantcompliant; | ONSEMI 安森美半导体 | | ||
功率 MOSFET，N 沟道，QFET®，900 V，9.0 A，1.4 Ω，TO-3P 该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •9A, 900V, RDS(on)= 1.4Ω（最大值）@VGS = 10 V, ID = 4.5A栅极电荷低（典型值：45nC)\n•低 Crss（典型值14pF)\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准\n•RoHS compliantcompliant; | ONSEMI 安森美半导体 | | ||
900V N-Channel MOSFET 文件：814.06 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | | ||
900V N-Channel MOSFET 文件：814.06 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | | ||
ThinkiSemi 9.0A,900V Planar N-Channel Power MOSFETs 文件：2.27004 Mbytes Page：7 Pages | THINKISEMI 思祁半导体 | | ||
900V N-Channel MOSFET 文件：804.61 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | | ||
900V N-Channel MOSFET 文件：798.35 Kbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | ||
900V N-Channel MOSFET | ONSEMI 安森美半导体 | | ||
900V N-Channel MOSFET 文件：798.35 Kbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | ||
900V N-Channel MOSFET 文件：804.61 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | | ||
900V N-Channel MOSFET 文件：798.35 Kbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | ||
900V N-Channel MOSFET 文件：804.61 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | | ||
900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with | FAIRCHILD 仙童半导体 | | ||
900V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high | FAIRCHILD 仙童半导体 | | ||
900V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high | FAIRCHILD 仙童半导体 | |
FQA9N90产品属性
- 类型
描述
- Compliance：
Pb-freeHalide free
- Status：
Active
- Description：
N-Channel QFET® MOSFET 900V
- Channel Polarity：
N-Channel
- Configuration：
- V(BR)DSS Min (V)：
900
- VGS Max (V)：
±30
- VGS(th) Max (V)：
5
- ID Max (A)：
8.6
- PD Max (W)：
240
- RDS(on) Max @ VGS = 10 V(mΩ)：
1300
- Qg Typ @ VGS = 10 V (nC)：
55
- Ciss Typ (pF)：
2100
- Package Type：
TO-3P-3LD / EIAJ SC-65
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
ON/安森美 |
SMD |
23+ |
6000 |
专业配单原装正品假一罚十 |
|||
ON/安森美 |
NA |
275000 |
一级代理原装正品,价格优势,长期供应! |
||||
ON/安森美 |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON/安森美 |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
|||
ON/安森美 |
21+ |
SMD |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
ON/安森美 |
22+ |
NA |
5750 |
可订货 请确认 |
|||
ON/安森美 |
25+ |
SMD |
20000 |
原装 |
|||
onsemi(安森美) |
25+ |
TO-3P |
22360 |
样件支持,可原厂排单订货! |
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FQA9N90规格书下载地址
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FQA9N90数据表相关新闻
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2021-3-25FQA28N50
热门搜索： 4 Channel N-Channel MOSFET , 450 V MOSFET , Si SMD/SMT N-Channel MOSFET , 100 A 250 V MOSFET , TO-264-3 MOSFET , 1.35 V MOSFET
2020-6-29FQA9N90C
FQA9N90C，全新原装当天发货或门市自取0755-82732291.
2020-6-25FQA8N100C全新原装现货
随时可发货
2019-9-17
DdatasheetPDF页码索引
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