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FQA9N90价格
参考价格：￥9.2179
型号：FQA9N90_F109 品牌：Fairchild 备注：这里有FQA9N90多少钱，2026年最近7天走势，今日出价，今日竞价，FQA9N90批发/采购报价，FQA9N90行情走势销售排行榜，FQA9N90报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：FQA9N90；N-Channel QFET® MOSFET 900 V, 8.6 A, 1.3 Ω Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval | ONSEMI 安森美半导体 |   | ||
FQA9N90 | 900V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand | FAIRCHILD 仙童半导体 | | |
FQA9N90 | 900V N-Channel MOSFET 文件：814.06 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | | |
丝印代码：FQA9N90C；N-Channel QFET® MOSFET 900 V, 9 A, 1.4 Ω Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval | ONSEMI 安森美半导体 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max) ·100 Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed swit | ISC 无锡固电 | | ||
900V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FAIRCHILD 仙童半导体 | | ||
900V N-Channel MOSFET 文件：814.06 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | | ||
900V N-Channel MOSFET 文件：814.06 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | | ||
ThinkiSemi 9.0A,900V Planar N-Channel Power MOSFETs 文件：2.27004 Mbytes Page：7 Pages | THINKISEMI 思祁半导体 | | ||
900V N-Channel MOSFET 文件：804.61 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | | ||
900V N-Channel MOSFET 文件：798.35 Kbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | ||
900V N-Channel MOSFET | ONSEMI 安森美半导体 | | ||
900V N-Channel MOSFET 文件：798.35 Kbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | ||
900V N-Channel MOSFET 文件：804.61 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | | ||
900V N-Channel MOSFET 文件：798.35 Kbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | ||
900V N-Channel MOSFET 文件：804.61 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | | ||
Power MOSFET, N-Channel, QFET®, 900 V, 9.0 A, 1.4 Ω, TO-3P | ONSEMI 安森美半导体 | | ||
功率 MOSFET，N 沟道，QFET®，900 V，9.0 A，1.4 Ω，TO-3P | ONSEMI 安森美半导体 | | ||
900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with | FAIRCHILD 仙童半导体 | | ||
900V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high | FAIRCHILD 仙童半导体 | | ||
900V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high | FAIRCHILD 仙童半导体 | |
FQA9N90产品属性
- 类型
描述
- 型号
FQA9N90
- 功能描述
MOSFET 900V N-Channel QFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
21+ |
TO-247 |
84 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON(安森美) |
2447 |
TO-263-3 |
115000 |
450个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
|||
onsemi(安森美) |
25+ |
TO-3P |
22412 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ON/安森美 |
NA |
275000 |
一级代理原装正品,价格优势,长期供应! |
||||
ON/安森美 |
21+ |
SMD |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
ON/安森美 |
22+ |
NA |
5750 |
可订货 请确认 |
|||
onsemi(安森美) |
25+ |
TO-3P |
22412 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
FQA9N90规格书下载地址
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FQA9N90数据表相关新闻
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FQB55N10TM
2024-1-16FQA30N40 TO-3P FAIRCHILD/仙童 MOS(场效应管) 原装正品
原装正品现货供应 0755-28892389/13713856319；QQ:2639752116；微信：13713856319；
2021-3-25FQA28N50
热门搜索： 4 Channel N-Channel MOSFET , 450 V MOSFET , Si SMD/SMT N-Channel MOSFET , 100 A 250 V MOSFET , TO-264-3 MOSFET , 1.35 V MOSFET
2020-6-29FQA9N90C
FQA9N90C，全新原装当天发货或门市自取0755-82732291.
2020-6-25FQA8N100C全新原装现货
随时可发货
2019-9-17
DdatasheetPDF页码索引
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