900V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max) ·100 Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed swit

900V N-Channel MOSFET

ThinkiSemi 9.0A,900V Planar N-Channel Power MOSFETs

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900V N-Channel MOSFET

文件：798.35 Kbytes Page：9 Pages

900V N-Channel MOSFET

文件：804.61 Kbytes Page：8 Pages

N-Channel QFET® MOSFET 900 V, 9 A, 1.4 Ω

Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval

900V N-Channel MOSFET

文件：798.35 Kbytes Page：9 Pages

900V N-Channel MOSFET

文件：804.61 Kbytes Page：8 Pages

900V N-Channel MOSFET

文件：804.61 Kbytes Page：8 Pages

900V N-Channel MOSFET

文件：798.35 Kbytes Page：9 Pages

Power MOSFET, N-Channel, QFET®, 900 V, 9.0 A, 1.4 Ω, TO-3P

功率 MOSFET，N 沟道，QFET®，900 V，9.0 A，1.4 Ω，TO-3P

N-Channel Power MOSFET

DESCRIPTION They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. The Nell 9N90 is a three-terminal silicon device with current conduction capability of 9A, fast switchi

Power MOSFET

DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 1.2Ω @ VGS=10V, ID=4.5A * U

900V N-CHANNEL MOSFET

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9A, 900V N-CHANNEL POWER MOSFET

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9A900V N-CHANNEL MOSFET

文件：178.3 Kbytes Page：7 Pages