N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 55A, RDS(ON) = 16mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 55A, RDS(ON) = 16mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 55A, RDS(ON) = 16mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

Fast Switching Speed

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N-Channel MOSFET uses advanced SGT technology

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