| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CED55N10 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 55A, RDS(ON) = 16mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package. | CET 华瑞 |   | |
CED55N10 | N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 55A, RDS(ON) = 16mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. | CET-MOS 华瑞 | | |
CED55N10 | N Channel MOSFET | CET 华瑞 | | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 55A, RDS(ON) = 16mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package. | CET 华瑞 | | ||
Fast Switching Speed 文件：49.16 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel MOSFET uses advanced SGT technology 文件：1.7768 Mbytes Page：5 Pages | DOINGTER 杜因特 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
25+ |
TO-251 |
1519 |
原装正品,假一罚十! |
|||
CET/華瑞 |
24+ |
NA/ |
2530 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
SOT-252 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
CET |
25+23+ |
TO252 |
75232 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
CET |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
CET |
23+ |
TO251 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
CET |
24+ |
TO-252 |
455 |
||||
C |
23+ |
TO-252 |
6000 |
原装正品，支持实单 |
|||
CET/華瑞 |
23+ |
SOT252 |
7000 |
||||
CET |
09+ |
SOT252 |
2530 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
CED55N10芯片相关品牌
CED55N10规格书下载地址
CED55N10参数引脚图相关
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CED55N10数据表相关新闻
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深圳市大唐盛世半导体有限公司 手 机：17727572380 。 电 话：0755-83226739 Q Q:626839837。 微信号：15096137729
2019-11-25
DdatasheetPDF页码索引
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