型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
CEU55N10 | N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,55A,RDS(ON)=16mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | ||
CEU55N10 | N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,55A,RDS(ON)=16mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | ||
CEU55N10 | N-ChannelMOSFETusesadvancedSGTtechnology 文件:1.7768 Mbytes Page:5 Pages | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,55A,RDS(ON)=16mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,55A,RDS(ON)=16mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | |||
FastSwitchingSpeed 文件:49.16 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
CET/華瑞 |
24+ |
NA/ |
10000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
CET |
25+ |
TO-252 |
54055 |
原装正品,假一罚十! |
|||
CET |
17+ |
TO-252 |
10000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CET |
21+ |
TO-252 |
10000 |
原装现货假一赔十 |
|||
CET/華瑞 |
24+ |
TO-252 |
499568 |
免费送样原盒原包现货一手渠道联系 |
|||
CET |
24+ |
TO-252 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
CET/華瑞 |
21+ |
TO-252 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
CET/華瑞 |
24+ |
TO-252 |
1283 |
只做原厂渠道 可追溯货源 |
|||
CEU |
23+ |
TO-252 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
CET |
24+ |
TO252 |
361 |
CEU55N10规格书下载地址
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