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FQP2N60价格
参考价格：￥2.4284
型号：FQP2N60C 品牌：FAIRCHILD 备注：这里有FQP2N60多少钱，2024年最近7天走势，今日出价，今日竞价，FQP2N60批发/采购报价，FQP2N60行情走势销售排行榜，FQP2N60报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FQP2N60 | 600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-ChannelQFET®MOSFET600V,2A,4.7Ω Description ThisN-ChannelenhancementmodepowerMOSFETis producedusingFairchildSemiconductor’sproprietaryplanar stripeandDMOStechnology.ThisadvancedMOSFET technologyhasbeenespeciallytailoredtoreduceon-state resistance,andtoprovidesuperiorswitchingperformance andhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=2.0A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.7Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-ChannelQFET®MOSFET600V,2A,4.7Ω Description ThisN-ChannelenhancementmodepowerMOSFETis producedusingFairchildSemiconductor’sproprietaryplanar stripeandDMOStechnology.ThisadvancedMOSFET technologyhasbeenespeciallytailoredtoreduceon-state resistance,andtoprovidesuperiorswitchingperformance andhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | | |
N2Amps竊?00VoltsN-ChannelMOSFET Description TheET2N60N-CeannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. Features ●RDS(ON)=5.00Ω@VGS=10V ●Lowgatecharge | ESTEKEstek Electronics Co. Ltd Estek Electronics Co. Ltd |  | | |
2Amps,600/650VoltsN-CHANNELPOWERMOSFET TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
600VN-ChannelPowerMOSFET Features ●RDS(ON) | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 |  | | |
2A600VN-channelEnhancementModePowerMOSFET 文件：1.34834 Mbytes Page：13 Pages | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 |  | |
FQP2N60产品属性
- 类型
描述
- 型号
FQP2N60
- 功能描述
MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
ON |
TO-220 |
70230 |
16余年资质 绝对原盒原盘 更多数量 |
||||
KERSEMI |
19+ |
TO-220 |
12000 |
||||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON/安森美 |
21+ |
TO-220-3 |
8080 |
只做原装,质量保证 |
|||
FAIRCHILD/仙童 |
24+23+ |
TO-220 |
12580 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
FAIRCHILD/仙童 |
24+ |
TO-220 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
FSC |
2023+ |
TO-220 |
16800 |
芯为只有原装,公司现货 |
|||
FAIRCHILD/仙童 |
220 |
08 |
68 |
||||
FAIRCHILD/仙童 |
23+ |
2020+ |
6500 |
专注配单,只做原装进口现货 |
FQP2N60芯片相关品牌
FQP2N60规格书下载地址
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