型号 功能描述 生产厂家&企业 LOGO 操作
FQP10N60C

600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pul

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP10N60C

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc

KERSEMI

FQP10N60C

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=9.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.73Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

FQP10N60C

600V N-Channel MOSFET

文件:1.02071 Mbytes Page:10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP10N60C

600V N-Channel MOSFET

文件:1.19884 Mbytes Page:10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

600V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching perfor mance, and withstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

600V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching perfor mance, and withstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

600V N-Channel MOSFET

文件:1.02071 Mbytes Page:10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a

UTC

友顺

N-Channel 6 50V (D-S) Power MOSFET

文件:2.17857 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N-Channel 650V (D-S) Power MOSFET

文件:2.33382 Mbytes Page:11 Pages

VBSEMI

微碧半导体

10A 600V N-channel Enhancement Mode Power MOSFET

文件:976.2 Kbytes Page:11 Pages

WXDH

东海半导体

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件:330.13 Kbytes Page:8 Pages

UTC

友顺

FQP10N60C产品属性

  • 类型

    描述

  • 型号

    FQP10N60C

  • 功能描述

    MOSFET 600V N-Ch Q-FET advance C-Series

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-15 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
24+
NA/
22087
优势代理渠道,原装正品,可全系列订货开增值税票
FAIRCHILD/仙童
25+
TO-220
88
原装正品,假一罚十!
VBsemi
21+
TO220
10026
一级代理,专注军工、汽车、医疗、工业、新能源、电力
FAIRCHILD/仙童
25+
TO-220
45000
FAIRCHILD/仙童全新现货FQP10N60C即刻询购立享优惠#长期有排单订
FSC
24+
TO-220
1526
全新原装环保现货
FAIRCHI
1844+
TO220
6528
只做原装正品假一赔十为客户做到零风险!!
FAIRCHILD/仙童
22+
TO-220
12245
现货,原厂原装假一罚十!
仙童
08+
TO-220
535
只做原装正品
FSC/Toohong
23+
TO-220
30000
代理全新原装现货,价格优势
FAIRCHILD/仙童
2223+
TO-220
26800
只做原装正品假一赔十为客户做到零风险

FQP10N60C数据表相关新闻