600V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching perfor mance, and withstan

600V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching perfor mance, and withstan

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a

N-Channel 6 50V (D-S) Power MOSFET

文件：2.17857 Mbytes Page：10 Pages

N-Channel 650V (D-S) Power MOSFET

文件：2.33382 Mbytes Page：11 Pages

10A 600V N-channel Enhancement Mode Power MOSFET

文件：976.2 Kbytes Page：11 Pages

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件：330.13 Kbytes Page：8 Pages