600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

N-Channel 650V (D-S) Power MOSFET

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Advanced Power MOSFET

BVDSS= 600 V RDS(on) = 0.8Ω ID= 9 A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25µA(Max.) @ VDS= 600V Low RDS(ON) : 0.646 (Typ.)

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

isc N-Channel MOSFET Transistor

文件：280.78 Kbytes Page：2 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.10815 Mbytes Page：10 Pages

isc N-Channel MOSFET Transistor

文件：280.78 Kbytes Page：2 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.10904 Mbytes Page：10 Pages

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a

N-Channel 6 50V (D-S) Power MOSFET

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N-Channel 650V (D-S) Power MOSFET

文件：2.33382 Mbytes Page：11 Pages

10A 600V N-channel Enhancement Mode Power MOSFET

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10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件：330.13 Kbytes Page：8 Pages