250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 9.4A, 250V, RDS(on) = 0.42Ω @VGS = 10 V • Low gate charge ( typical 15.5 nC) • Low Crss ( typical 15 pF) • Fast switching

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

MOSFET N-CH 250V 8.8A I2PAK

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

250V N-Channel MOSFET

250V N-Channel MOSFET

TMOS POWER FET 9.0 AMPERES 250 VOLTS

TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme

TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low v

TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low v