250V N-Channel MOSFET

250V N-Channel MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=6.7A@ TC=25℃ ·Drain Source Voltage -VDSS=250V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.42Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

250V N-Channel MOSFET

功率 MOSFET，N 沟道，QFET®，250 V，8.8 A，430 mΩ，TO-220F

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •8.8A, 250V, RDS(on)= 430mΩ（最大值）@VGS = 10 V, ID = 4.4A栅极电荷低（典型值：26.5nC)\n•低 Crss（典型值45.5pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=8.8A@ TC=25℃ ·Drain Source Voltage -VDSS=250V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.43Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

TMOS POWER FET 9.0 AMPERES 250 VOLTS

TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme

TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low v

TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low v