位置：首页 > IC中文资料第4122页 > FQP9N25
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FQP9N25 | 250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
FQP9N25 | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=9.4A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■250V,8.1A,RDS(ON)=450mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■250V,8.1A,RDS(ON)=450mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •9.4A,250V,RDS(on)=0.42Ω@VGS=10V •Lowgatecharge(typical15.5nC) •LowCrss(typical15pF) •Fastswitching | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-ChannelPowerMOSFET 文件：448.98 Kbytes Page：8 Pages | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 |  | |
FQP9N25产品属性
- 类型
描述
- 型号
FQP9N25
- 功能描述
MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
FSC |
1844+ |
TO-220 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
FAIRCHILD |
23+ |
TO-220 |
9980 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
|||
FSC |
22+ |
NA |
27003 |
全新原装正品现货 |
|||
FAIRCHILD/仙童 |
2022 |
TO-220 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
FAIRCHILD |
22+ |
35000 |
OEM工厂,中国区10年优质供应商! |
||||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
FAIRCILD |
22+ |
TO-220 |
8000 |
原装正品支持实单 |
|||
FAIRCHILD |
08+(pbfree) |
TO-220 |
8866 |
||||
FAIRCHILD/仙童 |
T0-220 |
265209 |
假一罚十原包原标签常备现货! |
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FQP9N25规格书下载地址
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