位置:MTP9N25E > MTP9N25E详情

MTP9N25E中文资料

厂家型号

MTP9N25E

文件大小

206.33Kbytes

页面数量

8

功能描述

TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM

- Bulk

数据手册

下载地址一下载地址二到原厂下载

生产厂商

MOTOROLA

MTP9N25E数据手册规格书PDF详情

TMOS E-FET Power Field Effect Transistor

N–Channel Enhancement–Mode Silicon Gate

This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

• Avalanche Energy Specified

• Source–to–Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• IDSS and VDS(on) Specified at Elevated Temperature

MTP9N25E产品属性

  • 类型

    描述

  • 型号

    MTP9N25E

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

  • 制造商

    ON Semiconductor

更新时间:2025-11-26 16:12:00
供应商 型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
-
7793
支持大陆交货,美金交易。原装现货库存。
ON
16+
TO-220
10000
全新原装现货
ON
24+
N/A
7000
DIODES/美台
23+
D2PAK
69820
终端可以免费供样,支持BOM配单!
ON/安森美
2022+
TO220
12888
原厂代理 终端免费提供样品
37850
23+
10
15523
原厂授权一级代理,专业海外优势订货,价格优势、品种
ON/安森美
22+
TO-220
98878
ON
25+
TO-TO-220
35628
独立分销商 公司只做原装 诚心经营 免费试样正品保证
ON
NEW
TO-220
6893
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
MICROCHIP
23+
QFN-16
95
现货库存

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