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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQI5N30TU | MOSFET N-CH 300V 5.4A I2PAK | ONSEMI 安森美半导体 |   | |
300V N-Channel MOSFET Features • 5.4A, 300V, RDS(on) = 0.9Ω @VGS = 10 V • Low gate charge ( typical 9.8 nC) • Low Crss ( typical 9.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability | FAIRCHILD 仙童半导体 | | ||
300V N-Channel MOSFET Features • 5.4A, 300V, RDS(on) = 0.9Ω @VGS = 10 V • Low gate charge ( typical 9.8 nC) • Low Crss ( typical 9.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability | FAIRCHILD 仙童半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=5.4A@ TC=25℃ ·Drain Source Voltage -VDSS=300V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.9Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
300V N-Channel MOSFET 300V N-Channel MOSFET | FAIRCHILD 仙童半导体 | | ||
Fast Switching Speed 文件：67.38 Kbytes Page：2 Pages | ISC 无锡固电 | |
FQI5N30TU产品属性
- 类型
描述
- 型号
FQI5N30TU
- 功能描述
MOSFET 300V Single
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
I2PAK(TO-262) |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FAIRCHILD/仙童 |
2026+ |
I2-PAKTO-262 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
FAIRCHILD/仙童 |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
|||
FAIRCHILD |
24+ |
TO-262 |
8866 |
||||
FSC |
0148+ |
TO-262 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD/仙童 |
23+ |
I2-PAKTO-262 |
24190 |
原装正品代理渠道价格优势 |
|||
FAIRCHILD |
26+ |
Sot-143 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
FSC |
23+ |
TO-262 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
24+ |
TO-262 |
6430 |
原装现货/欢迎来电咨询 |
||||
FAIRCHILD/仙童 |
23+ |
I2-PAKTO-262 |
24190 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
FQI5N30TU规格书下载地址
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DdatasheetPDF页码索引
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