丝印代码：5N30；N-Ch 30V Fast Switching MOSFETs

Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Halogen-free

Fast Switching Speed

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • Low leakage current • High speed switching

isc N-Channel MOSFET Transistor

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300V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

300V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

300V N-Channel MOSFET

300V N-Channel MOSFET

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.2 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ CHOPPER R

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.25 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ CHOPPER