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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 69A, RDS(ON) = 11mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 15mW @VGS = 4.5V

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 69A, RDS(ON) = 11mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 15mW @VGS = 4.5V

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=70A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

ISC

无锡固电

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fast Switching Speed

文件:49.14 Kbytes Page:2 Pages

ISC

无锡固电

更新时间:2025-8-10 9:40:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FSC
24+
SOT-4465&NBS
2000
只做原装正品现货 欢迎来电查询15919825718
ONSEMI/安森美
24+
TO-3P
381
只做原装,欢迎询价,量大价优
ON
22+
TO-3P
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
NA
23+
NA
26094
10年以上分销经验原装进口正品,做服务型企业
FAIRCHILD/仙童
25+
TO-3P
48
原装正品,假一罚十!
ON SEMICONDUCTOR
24+
con
35960
查现货到京北通宇商城
FAIRCHILD
23+
TO-3P
7300
专注配单,只做原装进口现货
FAIRCHILD
24+
TO-3P
3000
全新原装环保现货
ON/安森美
23+
TO-3P
10065
原装正品,有挂有货,假一赔十
三年内
1983
只做原装正品

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