200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 3.8A, 200V, RDS(on)= 1.2Ω@VGS= 10 V • Low gate charge ( typical 4.8 nC) • Low Crss ( typical 6.0 pF) • Fast

功率 MOSFET，N 沟道，逻辑电平，QFET®，200 V，3.8 A，1.2 Ω，DPAK

丝印代码：TPM2006NHK3；‘N-Channel MOSFET 200V, 6.04, 0.65Q

Features © Vos =200v + o= 60A + Rosin 50650 @Ves = 10V.

200V LOGIC N-Channel MOSFET

文件：624.29 Kbytes Page：9 Pages

N-Channel QFET MOSFET 200 V, 3.8 A, 1.2

文件：863.19 Kbytes Page：8 Pages

丝印代码：5N20A；N-Channel Enhancement Mode Power MOSFET

Description The 5N20A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l DC Motor Control and Class D Amplifier l Uninterruptible Power Supply (UPS) l Automotive

丝印代码：DPAK；N-Channel 200 V (D-S) MOSFET

文件：2.60721 Mbytes Page：10 Pages

Dual N-Channel 25-V (D-S) MOSFET

文件：1.69754 Mbytes Page：8 Pages

Dual N-Channel Enhancement Mode MOSFET

文件：172.46 Kbytes Page：2 Pages

N-CHANNEL MOSFET in a TO-252 Plastic Package

文件：1.95544 Mbytes Page：11 Pages