General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

• 3.8A, 200V, RDS(on)= 1.2Ω@VGS= 10 V

• Low gate charge ( typical 4.8 nC)

• Low Crss ( typical 6.0 pF)

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability

• Low level gate drive requirement allowing direct operation from logic drivers

• RoHS Compliant