丝印代码：DPAK；N-Channel 200 V (D-S) MOSFET

文件：2.60721 Mbytes Page：10 Pages

丝印代码：5N20A；N-Channel Enhancement Mode Power MOSFET

Description The 5N20A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l DC Motor Control and Class D Amplifier l Uninterruptible Power Supply (UPS) l Automotive

丝印代码：5N20A；DC Motor Control and Class D Amplifier

Features · Fast switching · 100% avalanche tested · Improved dv/dt capability · RoHS Compliant Application · DC Motor Control and Class D Amplifier · Uninterruptible Power Supply (UPS) · Automotive

Dual N-Channel 25-V (D-S) MOSFET

文件：1.69754 Mbytes Page：8 Pages

Dual N-Channel Enhancement Mode MOSFET

文件：172.46 Kbytes Page：2 Pages

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use i

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

N - CHANNEL 200V - 0.7ohm - 5A - TO-251/TO-252 POWER MOS TRANSISTOR

N - CHANNEL 200V - 0.7Ω - 5A - TO-251/TO-252 POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.7 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 150°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED C