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FQD2N100TM中文资料
FQD2N100TM数据手册规格书PDF详情
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
• 1.6 A, 1000 V, RDS(on) = 9 Ω (Max.)@ VGS = 10 V, ID = 0.8 A
• Low Gate Charge ( Typ. 12 nC)
• Low Crss ( Typ. 5 pF)
• 100 Avalanche Tested
• RoHS Compliant
FQD2N100TM产品属性
- 类型
描述
- 型号
FQD2N100TM
- 功能描述
MOSFET 1000V N-Channel QFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
11+19+ |
TO-252 |
6270 |
原装正品 可含税交易 |
|||
FAIRCHILD/仙童 |
24+ |
DPAK-3TO-252-3 |
3580 |
原装现货/15年行业经验欢迎询价 |
|||
FAIRCHILD/仙童 |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
ON/安森美 |
24+ |
DPAK |
15524 |
原装正品,现货库存,1小时内发货 |
|||
ONSEMI/安森美 |
25+ |
TO-252 |
32360 |
ONSEMI/安森美全新特价FQD2N100TM即刻询购立享优惠#长期有货 |
|||
ONSEMI |
25+ |
NA |
7000 |
全新原装!优势库存热卖中! |
|||
ON |
21+ |
TO252 |
10000 |
全新原装公司现货
|
|||
ON/安森美原装正品 |
26+ |
TO-252 |
17917 |
全新原装正品,价格优势,长期供应,量大可订 |
|||
ON(安森美) |
25+ |
N/A |
22412 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
ON/安森美 |
2023+ |
SMD |
15000 |
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站 |
FQD2N100TM 价格
参考价格：￥2.5547
FQD2N100TM 资料下载更多...
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- FQA11N90C-F109
- HDSP-A901
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- HLMP-Q150
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- IHLP5050FDER120M5A
- LBT45803
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- LQP15MN3N6B02
- LQW04AN23NH00
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- MMSZ5262BS
- NACZ470M6.3V5X6.3TR13F
- NACZ681M16V10X10.5TR13F
- NATT152M16V16X17JLSF
- NATT222M16V16X17JLSF
- SMAJ150
- SMAJ170
- SMAJ26
- SMAJ54A
- WRN7309-3000
- WRN78V15-1000
FAIRCHILD相关芯片制造商
Datasheet数据表PDF页码索引
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