位置：首页 > IC中文资料第221页 > FQB9N50CFTM
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQB9N50CFTM | 500V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FAIRCHILD 仙童半导体 |   | |
500V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FAIRCHILD 仙童半导体 | | ||
500V N-Channel MOSFET Features • 9.0A, 500V, RDS(on) = 0.73Ω @VGS = 10 V • Low gate charge ( typical 28 nC) • Low Crss ( typical 20 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability | FAIRCHILD 仙童半导体 | | ||
500V N-Channel MOSFET Features • 9.0A, 500V, RDS(on) = 0.73Ω @VGS = 10 V • Low gate charge ( typical 28 nC) • Low Crss ( typical 20 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability | FAIRCHILD 仙童半导体 | | ||
500V N-Channel MOSFET 500V N-Channel MOSFET | FAIRCHILD 仙童半导体 | | ||
500V N-Channel MOSFET Features • 7.2A,500V, RDS(on) = 0.73Ω @VGS = 10 V • Low gate charge ( typical 28 nC) • Low Crss ( typical 20 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability | FAIRCHILD 仙童半导体 | | ||
500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst | FAIRCHILD 仙童半导体 | |
FQB9N50CFTM产品属性
- 类型
描述
- 型号
FQB9N50CFTM
- 功能描述
MOSFET 500V N-CH MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
D2PAK(TO-263) |
12421 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
onsemi(安森美) |
25+ |
D2PAK(TO-263) |
12421 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
VB |
2026+ |
D2-PAK |
5000 |
原装正品,假一罚十! |
|||
FAIRCHILD |
24+ |
TO-263 |
9860 |
原装现货/放心购买 |
|||
ON/安森美 |
25+ |
TO-263-3 |
30000 |
原装正品公司现货,假一赔十! |
|||
ON/安森美 |
21+ |
SMD |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
ON/安森美 |
21+ |
TO-263-3 |
8080 |
只做原装,质量保证 |
|||
Fairchild |
24+ |
TO-263 |
7500 |
||||
Fairchild/ON |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
FSC |
17+ |
TO-263 |
6200 |
FQB9N50CFTM规格书下载地址
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FQB9N50CFTM数据表相关新闻
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2019-8-15
DdatasheetPDF页码索引
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