500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=9.0A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.73Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

500V N-Channel MOSFET

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500V N-Channel MOSFET

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 9A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V APPLICATIONS ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

功率 MOSFET，N 沟道，QFET®，500 V，9 A，800 mΩ，TO-220

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

Fast Switching Speed

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9A, 500V N-CHANNEL POWER MOSFET

文件：180.33 Kbytes Page：6 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.10594 Mbytes Page：10 Pages

9A 500V N-channel enhanced field effect transistor

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