EQI9N50芯片数据手册库存现货价格仙童半导体-IC资料网

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型号	功能描述	生产厂家企业	LOGO
EQI9N50	500V N-Channel MOSFET Features • 9.0A, 500V, RDS(on) = 0.73Ω @VGS = 10 V • Low gate charge ( typical 28 nC) • Low Crss ( typical 20 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability	FAIRCHILD 仙童半导体	FAIRCHILD
FQA9N50	500V N-Channel MOSFET 500V N-Channel MOSFET	FAIRCHILD 仙童半导体	FAIRCHILD
FQAF9N50	500V N-Channel MOSFET Features • 7.2A,500V, RDS(on) = 0.73Ω @VGS = 10 V • Low gate charge ( typical 28 nC) • Low Crss ( typical 20 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability	FAIRCHILD 仙童半导体	FAIRCHILD
FQB9N50	500V N-Channel MOSFET Features • 9.0A, 500V, RDS(on) = 0.73Ω @VGS = 10 V • Low gate charge ( typical 28 nC) • Low Crss ( typical 20 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability	FAIRCHILD 仙童半导体	FAIRCHILD
FQP9N50	500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst	FAIRCHILD 仙童半导体	FAIRCHILD