60V LOGIC N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

N-Channel QFET짰 MOSFET 60 V, 52.4 A, 21 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 52.4A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 21mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

功率 MOSFET，N 沟道，逻辑电平，QFET®，60 V，52.4 A，21 mΩ，D2PAK

N-Channel QFET짰 MOSFET 60 V, 52.4 A, 21 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

50 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 50N06is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mod

50 Amps, 60 Volts N-CHANNEL POWER MOSFET

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50A 60V N-channel Enhancement Mode Power MOSFET

文件：812.59 Kbytes Page：10 Pages

50A 60V N-channel Enhancement Mode Power MOSFET

文件：808.72 Kbytes Page：10 Pages

50A 60V N-channel Enhancement Mode Power MOSFET

文件：807.77 Kbytes Page：10 Pages