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FQB50N06L中文资料
FQB50N06L数据手册规格书PDF详情
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
• 52.4 A, 60 V, RDS(on) = 21 mΩ (Max.) @ VGS = 10 V, ID = 26.2 A
• Low Gate Charge (Typ. 24.5 nC)
• Low Crss (Typ. 90 pF)
• 100 Avalanche Tested
• 175°C Maximum Junction Temperature Rating
FQB50N06L产品属性
- 类型
描述
- 型号
FQB50N06L
- 功能描述
MOSFET 60V N-Channel QFET Logic Level
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
18+ |
TO-263 |
41200 |
原装正品,现货特价 |
|||
FAIRCHILD |
20+ |
TO-263 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
FAIRCHILD |
24+ |
TO-263(D2PAK) |
8866 |
||||
FAIRCHILD |
2023+环保现货 |
TO-263 |
20000 |
专注军工、汽车、医疗、工业等方案配套一站式服务 |
|||
FAIRCHILD/仙童 |
24+ |
NA/ |
125 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FAIRCHILD/仙童 |
2022+ |
TO-263 |
22817 |
原厂代理 终端免费提供样品 |
|||
FAIRCHILD/仙童 |
23+ |
TO-2632L(D2PAK) |
50000 |
全新原装正品现货,支持订货 |
|||
FAIRCHILD/仙童 |
24+ |
TO-263 |
30000 |
只做正品原装现货 |
|||
FAIRCHILD/仙童 |
25+ |
TO-263 |
80 |
原装正品,假一罚十! |
|||
onsemi(安森美) |
24+ |
TO-263-3 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
FQB50N06LTM 价格
参考价格：￥4.0812
FQB50N06L 资料下载更多...
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FAIRCHILD相关芯片制造商
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