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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQB14N30 | 300V N-Channel MOSFET Features • 14.4A, 300V, RDS(on) = 0.29Ω @VGS = 10 V • Low gate charge ( typical 30 nC) • Low Crss ( typical 23 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability • RoHS Compliant | Fairchild 仙童半导体 |   | |
FQB14N30 | 300V N-Channel MOSFET | ONSEMI 安森美半导体 | | |
300V N-CHANNEL MOSFET Features • 14.4A, 300V, RDS(on) = 0.29Ω @VGS = 10 V • Low gate charge ( typical 30 nC) • Low Crss ( typical 23 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability • RoHS Compliant | Fairchild 仙童半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.29Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
300V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand | Fairchild 仙童半导体 | | ||
300V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand | Fairchild 仙童半导体 | | ||
300V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand | Fairchild 仙童半导体 | | ||
300V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand | Fairchild 仙童半导体 | |
FQB14N30产品属性
- 类型
描述
- 型号
FQB14N30
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
300V N-Channel MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
2241 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FAIRCHILD/仙童 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
FAIRCHILD/仙童 |
25+ |
D2-PAKTO-263 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
FAIRCHILD |
1932+ |
TO-263 |
496 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD/仙童 |
24+ |
TO263 |
990000 |
明嘉莱只做原装正品现货 |
|||
FAIRCHILD/仙童 |
21+ |
D2-PAKTO-263 |
30000 |
优势供应 实单必成 可13点增值税 |
|||
FAIRCILD |
22+ |
TO-263 |
8000 |
原装正品支持实单 |
|||
FAIRCHILD |
25+ |
TO-263 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
FAIRCHILD |
24+ |
TO-263(D2PAK) |
8866 |
||||
onsemi(安森美) |
24+ |
TO-263 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
FQB14N30规格书下载地址
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随时可发货
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DdatasheetPDF页码索引
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