300V N-Channel MOSFET

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=14.4A@ TC=25℃ ·Drain Source Voltage -VDSS=300V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.29Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，N 沟道，QFET®， 300 V，14.4 A，290 mΩ，TO-220

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •14.4A, 300V, RDS(on)= 290mΩ（最大值）@VGS = 10 V, ID = 7.2A栅极电荷低（典型值：30nC)\n•低 Crss（典型值23pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

300V N-Channel MOSFET

300V N-Channel MOSFET

300V N-Channel MOSFET

300V N-Channel MOSFET

300V N-Channel MOSFET

Features • 14.4A, 300V, RDS(on) = 0.29Ω @VGS = 10 V • Low gate charge ( typical 30 nC) • Low Crss ( typical 23 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability • RoHS Compliant

300V N-Channel MOSFET