型号 功能描述 生产厂家&企业 LOGO 操作
FQB14N30TM

300VN-CHANNELMOSFET

Features •14.4A,300V,RDS(on)=0.29Ω@VGS=10V •Lowgatecharge(typical30nC) •LowCrss(typical23pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •RoHSCompliant

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

300VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

300VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

300VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

300VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQB14N30TM产品属性

  • 类型

    描述

  • 型号

    FQB14N30TM

  • 功能描述

    MOSFET 300V N-Channel QFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-6-20 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
22+
SOT-263
100000
代理渠道/只做原装/可含税
FAIRCHILD/仙童
23+
NA/
2241
优势代理渠道,原装正品,可全系列订货开增值税票
FAIRCHILD/仙童
24+
TO263
990000
明嘉莱只做原装正品现货
FAIRCHILD
21+
TO-263
18579
原装现货假一赔十
FSC
2020+
TO-263
3200
百分百原装正品 真实公司现货库存 本公司只做原装 可
FAIRCHILD/仙童
2022
TO-263
80000
原装现货,OEM渠道,欢迎咨询
FAIRCHILD
23+
TO-263
4741
原厂原装正品
FAIRCHILD/仙童
23+
TO-263
30000
全新原装现货,价格优势
FAIRCILD
22+
TO-263
8000
原装正品支持实单
FAIRCHILD/仙童
2024+实力库存
TO-263(D2PAK)
50000
只做原厂渠道 可追溯货源

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