位置：首页 > IC中文资料第1112页 > FQA14N30
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQA14N30 | 300V N-Channel MOSFET 300V N-Channel MOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | |
FQA14N30 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS=300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.29Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con | ISC 无锡固电 | | |
FQA14N30 | 300V N-Channel MOSFET | ONSEMI 安森美半导体 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.29Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
300V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
300V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
300V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
300V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |
FQA14N30产品属性
- 类型
描述
- 型号
FQA14N30
- 功能描述
MOSFET 300V N-Channel QFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
252 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FSC03/04 |
25+ |
TO3P |
1990 |
原装正品,假一罚十! |
|||
FSC |
03+04+ |
TO3P |
1990 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD |
24+ |
NA |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
FSC |
25+23+ |
TO3P |
45678 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
F |
24+ |
TO247 |
100 |
||||
onsemi(安森美) |
24+ |
TO-3P |
8110 |
支持大陆交货,美金交易。原装现货库存。 |
|||
FAIRCHILD/仙童 |
24+ |
TO3P |
21574 |
郑重承诺只做原装进口现货 |
|||
仙童 |
06+ |
TO-247 |
800 |
原装库存 |
|||
FAIRCHILD |
2023+ |
3P |
50000 |
原装现货 |
FQA14N30规格书下载地址
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2020-6-29
DdatasheetPDF页码索引
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