50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs

These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs

50 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 50N06is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mod

50 Amps, 60 Volts N-CHANNEL POWER MOSFET

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丝印：50N06；50A 60V N-channel Enhancement Mode Power MOSFET

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丝印：50N06；50A 60V N-channel Enhancement Mode Power MOSFET

文件：808.72 Kbytes Page：10 Pages

丝印：50N06；50A 60V N-channel Enhancement Mode Power MOSFET

文件：807.77 Kbytes Page：10 Pages