N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Applica

功率MOSFET 400V-500V

SMPS MOSFET

Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Charac

TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.240 OHM

TMOS E−FET Power Field Effect Transistor D3PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surfa

TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM

TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMO

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. FEATURES • Repet

N-CHANNEL ENHANCEMENT MODE TRANSISTOR

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