TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM

TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMO

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.24Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM

N?묬hannel Power MOSFET

文件：107.32 Kbytes Page：8 Pages

N-Channel Power MOSFET

DESCRIPTION They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits, UPS and general purpose switching applications. The Nell 20N50 is a three-terminal silicon device with current conduction capability of 20A, fast switching sp

Low leakage current

文件：146.73 Kbytes Page：2 Pages

20A, 500V N-CHANNEL POWER MOSFET

文件：142.14 Kbytes Page：4 Pages

20A 500V N-channel Enhancement Mode Power MOSFET

文件：1.53702 Mbytes Page：11 Pages

20A 500V N-channel enhanced field effect transistor

文件：888.77 Kbytes Page：6 Pages