TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.240 OHM

TMOS E−FET Power Field Effect Transistor D3PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surfa

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.24Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power Field Effect Transistor

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N-Channel Power MOSFET

DESCRIPTION They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits, UPS and general purpose switching applications. The Nell 20N50 is a three-terminal silicon device with current conduction capability of 20A, fast switching sp

Low leakage current

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20A, 500V N-CHANNEL POWER MOSFET

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20A 500V N-channel Enhancement Mode Power MOSFET

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20A 500V N-channel enhanced field effect transistor

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